1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 jiangsu changjiang electronics technology co., ltd sot-23-3l plastic-encapsulate transistors MMBTA44 transistor (npn) features power dissipation p cm: 0.35 w (tamb=25 ) collector current i cm: 0.2 a collector-base voltage v (br)cbo : 400 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 400 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v(br) ebo i e =100a, i c =0 5 v collector cut-off current i cbo v cb =400v, i e =0 0.1 a collector cut-off current i ceo v ce =400v 5 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a h fe(1) v ce =10v, i c =10 ma 80 300 h fe(2) v ce =10v, i c =1ma 70 dc current gain h fe(3) v ce =10v, i c =100 ma 60 v ce (sat) i c =10 ma, i b =1ma 0.2 v collector-emitter saturation voltage v ce (sat) i c =50 ma, i b =5ma 0.3 v base-emitter sataration voltage v be (sat) i c =10 ma, i b = 1 ma 0.75 v transition frequency f t v ce =20v, i c =10ma f =30mhz 50 mhz marking 3d sot-23-3l 1. base 2. emitter 3. collector
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